tor wafers, thin fdms on wafers, and thin near-surface regions of diffused or ion-
implantation doped wafers. The method of choice for the resistance measurement
is
a four point probe arrangement of contacts with the surface through which
current is passed using two of the probes and the voltage
drop
being measured
across the other two.
Parameter measured
Main
usage
Sample
requirements
Destructive
Accuracy
Quantitative
Lateral
resolution
Depth
resolution
Instrument cost
Size
Electrica ...
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