Characterization in Silicon Processing

ι—ι—ι—ι—ι—ι—ι—ι—ι—Γ

H/Si(IOO)-2xl

823K

500

550 600 650 700 750 800 850 900 950 1000

TEMPERATURE

(K)

Figure

1.3 Thermal desorption spectrum of an HF-cleaned hydrogen-passi-

vated silicon surface showing hydrogen desorption

above -625 °C.

(After Reference

33;

reprinted by

permission

of the authors.)

has confirmed

that

the surface remains oxide-free after HF treatment and 10 min

exposure to

room

air (Figure 1.2), and thermal desorption spectroscopy has shown

that

hydrogen evolution from the silicon surface occurs above -625 °C (Figure

1.3).

In the same study, epitaxial growth was noted to be difficult to achieve from

-650

°C up to 750 °C, sinc