October 2013
Intermediate to advanced
240 pages
11h 53m
English
Content preview from Characterization in Silicon Processing
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Figure
4.11
High-resolution
SEM of a
hillock formed
in an
aluminum
2%
silicon metal line
due to
post metal deposition heat
cycling.
Deposition
was at
room temperature
by
planar
magentron.
(as
is PECVD-deposited silicon nitride),
then
hillocks may form. The encapsulat-
ing film can also lead to void formation. A study
done
by Yost et al.12 indicates
that
the inherent stress in the metallization itself can lead to void formation over time
even without an encapsulating film. Hillocks have been defined earlier in this chap-
ter. Voids are simply the absence of metal in a particular area
(typically
along grain
boundaries and triple points).
Analytica ...
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