Characterization in Silicon Processing

.

AS DEPOSITED CO-SPUTTERED

TQ-Sl

2

TQSi

2

CHANNEL

Figure

3.5

Comparision

of

RBS spectra

of

2500-À cosputtered TaSi

2

/3000-À

polysilicon/1000-Â thermal

Si0

2

/Si before and after 1000

°C/30-

min

anneal.

were

different for different metal-silicon films. It may be pointed out

that

the

linearity

of the relationship shown in Figure 3.4 invariably

fails

at higher Si/M

ratios not shown in this figure.

Figure

3.4 presents the calibration for the as-deposited films.

Upon

annealing,

redistribution of atomic species occur. The redistribution is a function of the start-

ing Si/M ratio, annealing temperature, time, ambient, the substrate, and the metal

type.