
films
of TiN have found use in VLSI devices as barriers and antireflective coatings.
The crystal structure of TiN is face centered cubic (fee) with a NaCl structure and a
lattice
constant of 4.23 Â.
25
The bulk density and melting
point
of TiN are
5.22 g/cm
3
and 2930 °C, respectively.
15
TiN is a defect compound owing to the
presence of
vacancies.
The sheet resistance of a reactively sputtered TiN film is a
strong function of the sputtering conditions, stoichiornetry, and composition, vary-
ing from 25 to 200 μΩ-cm. The golden yellow color of TiN can be used as an
indication of the stoichiornetry of the film, as described below.
The characteristi ...