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Characterization in Silicon Processing
book

Characterization in Silicon Processing

by Yale Strausser
October 2013
Intermediate to advanced
240 pages
11h 53m
English
Newnes
Content preview from Characterization in Silicon Processing
The RBS spectra were obtained using a 16 MeV Ο beam. Spectra from different
processing times are superimposed. The 3 s anneal formed 360 Â of
TiSi
2
.
The
silicide
formation was complete after 8 s anneal, approximately 1420 Â
TiSi
2
is
formed.
Note
in this study no titanium rich compounds were detected. These
studies
demonstrate the direct formation of
TiSi
2
by rapid thermal annealing.
X-Ray Diffraction Measurements
Both X-ray and electron diffraction provide information
about
the microstructure
and
crystallinity
of
films,
the information not obtained by the resistance or RBS
CL
CO
Z)
Ο
ϋ
1750
AS
DEP.
3
SEC.
4
SEC.
5
SEC.
6
SEC.
8
SEC.
10
SEC
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Publisher Resources

ISBN: 9780080523422