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Characterization in Silicon Processing
book

Characterization in Silicon Processing

by Yale Strausser
October 2013
Intermediate to advanced
240 pages
11h 53m
English
Newnes
Content preview from Characterization in Silicon Processing
_L
50μ (.002")
Τ
Sometimes a pattern
is invisible—usually
not a problem.
(desirable for very deep
features such as buried
layers and wells)
500μ -
.020"-
J1
12
33
i*
]6
η
38
39
310
J1 1
NOT ACCEPTABLE
NOTES
1.
If there is a very shallow emitter/base and a very deep buried
layer a ΙΟΟμ χ ΙΟΟΟμ structure is suggested.
2.
In general, longer is always better—say up to 1500μ.
3. Width can be a problem as the number of patterns increases.
Please reduce the space between patterns to what is
essential for lateral diffusion effects.
4. Label the structures at the first possible masking step.
5. Orient the long dimension of the pattern parallel to the
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Publisher Resources

ISBN: 9780080523422