Characterization in Silicon Processing

characteristics

of

silicides,

and there is considerable variation in reported results. It

has only recently been realized

that

a large number of parameters determine oxida-

tion rates and the quality of the oxides produced. Chu et

al.

59

studied the effect of

silicide

deposition parameters—such as stoichiometry, substrate bias during co-

sputtering, and the substrate rotational speed—on the quality of the thermally

grown oxide after deposition and anneal.

Gant

et

al.

60

report

the effects of dopants

and deposition parameters—such as substrate heating, substrate cleaning prior to

loading in the sputtering chamber, and substrate cleaning in situ