Characterization in Silicon Processing

and Ο and C in organometallic precursor-based TiN films degrade the quality of

the

film.

Further,

these reactions take place at high temperatures, for example,

above 600 °C for

T1CI4

chemistry and 450 °C for organometallic-precursor chem-

istry,

which may be an issue with process integration. CVD techniques are also

prone

to produce particles during deposition.

Nitridation

and

Rapid Thermal Annealing

Thin TiN films can be processed at the surface of Ti by rapid thermal annealing

(RTA)

a Ti film at 900 °C for 30 s in a nitrogen ambient. During the annealing,

N

2

reacts with Ti to form TiN at the surface, and the TiN thickness is limited by

th