Characterization in Silicon Processing

12F

.ι»

1.4

ENERGY(MeV)

Figure

1.10 RBS

spectrum

of a 420

Â-thick graded

Si-,

_

x

Ge

x

film.

Ge

con-

centration varies from

17% to 9%. The

points

are the

count

data,

while

the

solid line

is a

simulated spectrum used

to fit

the data

points.

The

separate peak

to the

right

is the Ge

sig-

nal.

(After Reference

68;

reprinted

by

permission

of M. L.

Green,

AT&T Bell Laboratories.)

controlled-atmosphere loadlock, to minimize the presence of contaminants. High-

quality

Sij

_

x

Ge

x

films have been grown using dichlorosilane and germane at tem-

peratures in the 600—700 °C range.

70

1.6 Si

1

_

x

Ge

x

Material Characterization

Strained

heteroepitaxial films of Sij.^Ge ...