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Sections 11.3 and 11.4, respectively. A brief introduction to 3-D interconnects
is provided in Section 11.5 as a glimpse into future interconnect technologies.
Finally, some concluding remarks are offered in Section 11.6.
11.1 DSM INTERCONNECT DESIGN
The steady decrease in the feature size of semiconductor devices has enhanced cir-
cuit complexity and performance. Scaling of the lateral dimensions in planar devices,
such as MOS transistors, has produced improvements in the area, power, and speed
of the devices [12]. The specifi c characteristics of interconnects, particularly the
global lines, are degraded by current scaling trends. The ...