
501
(greater than 10 GHz). At such frequencies, these inductive effects can
negatively infl uence performance on CNTs, which needs to be addressed
when comparing CNTs to Cu interconnects in future technologies.
13.4 SUMMARY
Traditional on-chip metallic interconnects are beginning to show their limita-
tions due to a number of reasons: high resistivity (due to electron grain and grain
boundary scatterings, leading to large propagation delays, and poor performance),
low reliability, and high susceptibility to electromigration (at high current densi-
ties) with technology and interconnect scaling. Consequently, novel on-chip inter-
connection ...